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20 July 1981 Monolithic InSb Charge Injection Device (CID) Technology
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Proceedings Volume 0267, Staring Infrared Focal Plane Technology; (1981)
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Because of their simple structure, modest interconnect requirement, and read-out flexibility, charge-injection devices are attractive candidates for the realization of staring infrared focal-plane arrays. We have developed a CID technology in indium antimonide and have fabricated and tested a 32 x 32 imaging array. The CIDs are fabricated on bulk InSb wafers using a process which requires only five photomask steps and no p-n junctions. Read-out is performed without the requirement to operate in the charge-sharing mode. Point overloads do not result in column blooming. Data have been collected on array spatial uniformity, noise performance, and real-time imaging operation. This paper discusses the device fabrication and presents some of the results of the imager evaluation.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. N. Pocock, C. H. Chen, J. B. Underwood, and E. I. Dillard "Monolithic InSb Charge Injection Device (CID) Technology", Proc. SPIE 0267, Staring Infrared Focal Plane Technology, (20 July 1981);

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