Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals

David Harradine; F. Read McFeely; Bobbi Roop; Jeffrey I. Steinfeld; Dean Denison; Larry Hartsough; John R. Hollahan

doi:10.1117/12.931735

15 September 1981 Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals

David Harradine, F. Read McFeely, Bobbi Roop, Jeffrey I. Steinfeld, Dean Denison, Larry Hartsough, John R. Hollahan

Proceedings Volume 0270, High Power Lasers and Applications; (1981) https://doi.org/10.1117/12.931735
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Reactive etching at silicon and silicon-oxide surfaces is customarily carried out in a fluorocarbon plasma. Under such conditions, a large variety of reactive species is generated, making it extremely difficult to elucidate details of the etching mechanism; in addition, the charged species present in the plasma frequently produce undesirable radiation damage in the finished devices. We have found that dissociation of the parent fluorocarbons by multiple-infrared-photon excitation produces reactive neutral fragments which are capable of etching these surfaces. Etch gases such as CF3Br, CF2HC1, CF300CF3, and SF, may be used with poly-Si, Si02, Si3 Nd' and other substrates; SEM, ESCA, and Auger diagnostics are employed to characterize the reactions occurring at the surface. From these experiments we hope to develop a quantitative model for the reactive etching process. Possible commercial advantages of the laser-etching technique include reduction or elimination of radiation damage, increased etching rates, and improved Si02/Si specificity.

Citation Download Citation

David Harradine, F. Read McFeely, Bobbi Roop, Jeffrey I. Steinfeld, Dean Denison, Larry Hartsough, and John R. Hollahan "Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals", Proc. SPIE 0270, High Power Lasers and Applications, (15 September 1981); https://doi.org/10.1117/12.931735

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