15 September 1981 Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals
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Proceedings Volume 0270, High Power Lasers and Applications; (1981) https://doi.org/10.1117/12.931735
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Reactive etching at silicon and silicon-oxide surfaces is customarily carried out in a fluorocarbon plasma. Under such conditions, a large variety of reactive species is generated, making it extremely difficult to elucidate details of the etching mechanism; in addition, the charged species present in the plasma frequently produce undesirable radiation damage in the finished devices. We have found that dissociation of the parent fluorocarbons by multiple-infrared-photon excitation produces reactive neutral fragments which are capable of etching these surfaces. Etch gases such as CF3Br, CF2HC1, CF300CF3, and SF, may be used with poly-Si, Si02, Si3 Nd' and other substrates; SEM, ESCA, and Auger diagnostics are employed to characterize the reactions occurring at the surface. From these experiments we hope to develop a quantitative model for the reactive etching process. Possible commercial advantages of the laser-etching technique include reduction or elimination of radiation damage, increased etching rates, and improved Si02/Si specificity.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Harradine, David Harradine, F. Read McFeely, F. Read McFeely, Bobbi Roop, Bobbi Roop, Jeffrey I. Steinfeld, Jeffrey I. Steinfeld, Dean Denison, Dean Denison, Larry Hartsough, Larry Hartsough, John R. Hollahan, John R. Hollahan, } "Reactive Etching Of Semiconductor Surfaces By Laser-Generated Free Radicals", Proc. SPIE 0270, High Power Lasers and Applications, (15 September 1981); doi: 10.1117/12.931735; https://doi.org/10.1117/12.931735

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