Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 Am Spectral Region

S. H. Shin; J. G. Pasko; D. T. Cheung

doi:10.1117/12.965688

28 July 1981 Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 μm Spectral Region

S. H. Shin, J. G. Pasko, D. T. Cheung

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965688
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Hgi-xCdxTe epitaxial layers have been successfully grown in various compositions, for 1-3 μm applications. n+/p junctions are formed either by a standard B-implantation into as-grown p-type layers or by doubly grown p- and n-layers. The SWIR HgCdTe photodiodes exhibit quantum efficiencies of 55-65% without AR coating. For the diodes with 1.39 μm cut-off at room temperature, the zero bias detector resistance-area (RoA) product is 4 x 10 4 Ω-cm2, and the dark current density is ~ 1 x 10 -4 A/cm2 at half-breakdown voltage. The same values of ~ 104 Ω-cm2 RoA products have also been measured for 2.4 μm cut-off photodiodes at 195K. The energy gap and temperature dependence of RoA product is in excellent agreement with the bulk limited generation-recombination model. The breakdown voltages of SWIR diodes vary from 12 volts to greater than 130 volts, depending on the Cd composition (x) and base carrier concentrations.

Citation Download Citation

S. H. Shin, J. G. Pasko, and D. T. Cheung "Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 μm Spectral Region", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965688

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