28 July 1981 GaAIAsSb/GaSb Avalanche Photodetectors
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Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965685
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
The growth and fabrication of GaAlAsSb/GaSb avalanche photodiodes is discussed. The leakage current, gain, and uniformity of heterojunction, ion-implanted and Schottky-barrier structures are examined. In addition, the effect of the valence band spin orbit splitting upon avalanche noise is briefly discussed. It is shown that the prevalent problem of these devices is a high surface leakage current.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raymond Chin, H. D. Law, K. Nakano, "GaAIAsSb/GaSb Avalanche Photodetectors", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965685; https://doi.org/10.1117/12.965685
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