28 July 1981 GaAlAs/GaAs Avalanche Photodetectors
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Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965692
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
High performance GaAlAs/GaAs heterostructure avalanche photodiodes (APD) have been fabricated. The spectral response of these devices are from 0.48 μm to 0.89 μm. The quantum efficiency at unity gain is as high as 95%. Microwave gain (273 MHz) of 42 dB has been observed in these devices. Dark current is extremely low ~ l0 -12 A at half the breakdown voltage. Low noise characteristics of the Read structure APD cannot be verified at this moment because of the poorer performance than the traditional LPE heterostructure APD. With careful design, III-V heterostructure photodiode can have response time as low as 5 ps.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. D. Law, K. Nakano, J. J. Coleman, "GaAlAs/GaAs Avalanche Photodetectors", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965692; https://doi.org/10.1117/12.965692
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