28 July 1981 In0.53Ga0.47As Field-Effect Transistor (FETs) And PIN-FETs
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Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965689
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
The transport properties of In0.53Ga0.47As indicate that this ternary material is a strong candidate for future FET's. Early results reported for FET's prepared from this material are reviewed and compared. The advantage of the JFET for fabrication of PIN-FET integrated optical receiver circuits is pointed out and updated results are presented for these devices. Transconductance values are presently 50 mS/mm, while work aimed at further reduction of gate dimensions is expected to yield even higher values.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. E. Nahory, R. E. Nahory, R. F. Leheny, R. F. Leheny, "In0.53Ga0.47As Field-Effect Transistor (FETs) And PIN-FETs", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965689; https://doi.org/10.1117/12.965689

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