28 July 1981 Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And Experiment
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Abstract
Linewidth control using a tri-level resist system on wafers with topology is investigated. An absorbing dye is incorporated in the bottom layer to improve the usable resolution. Resist patterns of 1 μm and 0.75 μm over underlying geometries are demonstrated using a projection aligner. The advantages of a multilevel system are investigated using an exposure and development simulation program for optical lithography. The relative contributions of planarization and reflection suppression are discussed.
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M. M. O'Toole, M. M. O'Toole, E. D. Liu, E. D. Liu, M. S. Chang, M. S. Chang, "Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And Experiment", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931883; https://doi.org/10.1117/12.931883
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