30 April 1981 Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs
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Abstract
The localized vibrational mode of 12C implanted into GaAs at 6 MeV and a fluence of 5xlO16 /cm2 is studied as a function of annealing to 900°C. The feature sharpens and decreases in strength until 500°C and saturates thereafter. Electrical measurements indicate p-type behavior of the implant at 900°C, which is usual for implants of this nature.
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W. M. Theis, W. M. Theis, C. W. Litton, C. W. Litton, K. K. Bajaj, K. K. Bajaj, "Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931695; https://doi.org/10.1117/12.931695
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