30 April 1981 Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers
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Abstract
Internally reflected electroabsorption, a modulation spectroscopy tool, can be used as a nondestructive optical method to determine the gap energies and, hence, the composition of the epitaxial layers in heterostructures. At the same time, the presence of built-in inter-face potentials can also be determined. The method was used to study n-n GaAs1-xSbx hetero-structures grown on n+ GaAs substrates using a simple Schottky barrier contact.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Bottka, N. Bottka, Marian E. Hills, Marian E. Hills, } "Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931701; https://doi.org/10.1117/12.931701
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