30 April 1981 Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity
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Abstract
A recently developed optical reflectivity technique for monitoring laser-induced solid phase epitaxial crystal growth in real time is described, and examples which illustrate its use in studies of solid-state kinetics in ion-implanted and UHV-deposited films are presented. Data which show the dependence of epitaxial growth rate on the position of the crystal/amorphous interface, growth rate as a function of temperature, and deviations from ideal epitaxial growth due to competing crystallization processes are presented and discussed. The laser technique represents a significant advance in experimental capabilities for measuring details of solid phase epitaxy kinetics; crystallization rates can be accurately measured at higher temperatures, and with greater temporal and spatial resolution than had been previously possible.
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G. L. Olson, S. A. Kokorowski, J. A. Roth, R. S. Turley, L. D. Hess, "Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931698; https://doi.org/10.1117/12.931698
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