30 April 1981 Lifetime Scanning Measurements On Hg0.7Cd0.3Te By Population Modulation
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Abstract
A contactless optical technique has been developed for the measurement of excess photogenerated carrier lifetime in Hg0.7Cd0.3Te in a raster scan mode. The technique consists of measuring the steady state mod-ulation AI in the transmitted intensity I of a probe beam (-11,a) < Eg) due to a modulated pump beam (Kw < Eg) incident on the same surface. The fractional change in the probe beam transmission AI/I is related to the excess carrier lifetime. Lifetimes in the 20 ns to 20 us range have been measured using pump photon fluxes on the order of 1018 photons/cm2-s.
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J. A. Mroczkowski, J. A. Mroczkowski, J. F. Shanley, J. F. Shanley, D. L. Polla, D. L. Polla, P. J. Kannam, P. J. Kannam, } "Lifetime Scanning Measurements On Hg0.7Cd0.3Te By Population Modulation", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931686; https://doi.org/10.1117/12.931686
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