30 April 1981 Microstructural Information From Optical Properties In Semiconductor Technology
Author Affiliations +
Abstract
The optical properties of a material in the near-ir--near-uv spectral range are predominantly determined by electronic polarizabilities. The electronic polarizabilities are determined in turn by composition, local order, and long-range order. We discuss methods developed to parametrize the information contained in optical properties of micro-scopically heterogeneous systems, and to obtain the values of these parameters. These methods are based on accurate bulk dielectric function values of constituents, effective medium theory, and linear regression analysis. Recent theories that establish limits on allowed values of the dielectric response of two-component systems, regardless of their microstructure, provide an indication of the reliability of these parameters.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. E. Aspnes, "Microstructural Information From Optical Properties In Semiconductor Technology", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931705; https://doi.org/10.1117/12.931705
PROCEEDINGS
8 PAGES


SHARE
KEYWORDS
Dielectrics

Data modeling

Amorphous silicon

Semiconductors

Statistical modeling

Oxides

Optical properties

Back to Top