Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors

G. P. Schwartz

doi:10.1117/12.931689

30 April 1981 Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors

G. P. Schwartz

Author Affiliations +

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931689
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The application of surface reflection Raman scattering as an optical probe for monitor-ing the presence and growth of elemental deposits of group V (P,As,Sb) metalloids in native oxide films on III-V compound semiconductors is discussed. Selective data from the litera-ture concerning arsenic inclusions in native oxides on GaAs and Al_xGa_l__xAs and red phosphor-us deposits in thermally oxidized films on InP are used to illustrate the technique.

Citation Download Citation

G. P. Schwartz "Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931689

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available