30 April 1981 Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors
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Abstract
The application of surface reflection Raman scattering as an optical probe for monitor-ing the presence and growth of elemental deposits of group V (P,As,Sb) metalloids in native oxide films on III-V compound semiconductors is discussed. Selective data from the litera-ture concerning arsenic inclusions in native oxides on GaAs and AlxGal_xAs and red phosphor-us deposits in thermally oxidized films on InP are used to illustrate the technique.
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G. P. Schwartz, G. P. Schwartz, } "Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931689; https://doi.org/10.1117/12.931689
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