Development Of In-X Doped Silicon As An Infrared Detector Material

D. K. Arch; D. E. Schafer

doi:10.1117/12.965806

11 June 1981 Development Of In-X Doped Silicon As An Infrared Detector Material

D. K. Arch, D. E. Schafer

Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965806
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

Recently, a class of shallow acceptor levels in silicon, called X-levels, have been discovered which are associated with all the Group III A acceptors. The indium related X-level at 0.113eV appears to be ideally suited to match the 8-12μm atmospheric window. This defect has been shown to arise from a substitutional In and C nearest neighbor pair. We have performed a variety of measurements to determine the feasibility of utilizing the In-X defect in a photoconductor. In particular, silicon crystals heavily doped with both indium and carbon have been grown by thermal gradient transport from indium solutions. Annealing studies have been done to determine whether In-X concentrations in excess of 1-1017cm-3 can be produced in reasonable annealing times. Such a concentration would be necessary to produce detectors with adequate quantum efficiency.

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D. K. Arch and D. E. Schafer "Development Of In-X Doped Silicon As An Infrared Detector Material", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); https://doi.org/10.1117/12.965806

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