Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties

O. J. Marsh; R. Baron; J. P. Baukus; M. H. Young; G. D. Robertson

doi:10.1117/12.965802

11 June 1981 Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties

O. J. Marsh, R. Baron, J. P. Baukus, M. H. Young, G. D. Robertson

Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965802
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

For extrinsic silicon detector arrays, performance is optimized by a careful compromise among several material characteristics affected by growth and processing parameters. In this paper we discuss the role of the major and minor dopant concentrations on spectral response, spatial uniformity of responsivity, impact ionization and impurity band conduction. The impact of these on detector operational constraints is a key element in focal plane detector array design.

Citation Download Citation

O. J. Marsh, R. Baron, J. P. Baukus, M. H. Young, and G. D. Robertson "Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); https://doi.org/10.1117/12.965802

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