11 June 1981 Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties
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Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965802
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States
Abstract
For extrinsic silicon detector arrays, performance is optimized by a careful compromise among several material characteristics affected by growth and processing parameters. In this paper we discuss the role of the major and minor dopant concentrations on spectral response, spatial uniformity of responsivity, impact ionization and impurity band conduction. The impact of these on detector operational constraints is a key element in focal plane detector array design.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. J. Marsh, R. Baron, J. P. Baukus, M. H. Young, G. D. Robertson, "Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965802; https://doi.org/10.1117/12.965802
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