11 June 1981 Magnetoresistance In IV-VI Semiconductors
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Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965792
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States
Abstract
A brief outline is given of some of the more important magnetoresistance effects seen in the IV-VI semiconductors. In addition, an interesting strong magnetic field magnetoresistance phenomenon is exhibited and the use of weak-field magnetoresistance to examine strain in thin film samples is presented in more detail. Data showing the effects discussed are given using PbTe thin films as examples.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. B. Restorff, B. B. Houston, "Magnetoresistance In IV-VI Semiconductors", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); doi: 10.1117/12.965792; https://doi.org/10.1117/12.965792
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