The Pb/PbS0.5Se0.5 Interface And Performance Of Pb/PbS0.5Se0.5 Photodiodes

M. Drinkwine; J. Rozenbergs; S. Jost; A. Amith

doi:10.1117/12.965789

11 June 1981 The Pb/PbS_0.5Se_0.5 Interface And Performance Of Pb/PbS_0.5Se_0.5 Photodiodes

M. Drinkwine, J. Rozenbergs, S. Jost, A. Amith

Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965789
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

Surface analysis has indicated that improved IV-VI metal-semiconductor photodiode performance results from the incorporation of chlorine at the Pb/semiconductor interface. Lower reverse bias leakage current and steeper forward bias slope are observed in devices fabricated from material treated with chlorine than devices which are processed normally. RoA values of 250 Ω cm2 and Dλ* values of 1 x 10^11 cm Hz1/2 W-1 at 80K for 10-and 80-mil diameter active area devices have been obtained.

Citation Download Citation

M. Drinkwine, J. Rozenbergs, S. Jost, and A. Amith "The Pb/PbS_0.5Se_0.5 Interface And Performance Of Pb/PbS_0.5Se_0.5 Photodiodes", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); https://doi.org/10.1117/12.965789

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