Impurity Modes In Semi-Insulating Chromium Doped Gallium Arsenide

D. G. Mead; C. R. Anderson

doi:10.1117/12.932113

29 October 1981 Impurity Modes In Semi-Insulating Chromium Doped Gallium Arsenide

D. G. Mead, C. R. Anderson

Proceedings Volume 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy; (1981) https://doi.org/10.1117/12.932113
Event: 1981 International Conference on Fourier Transform Infrared Spectroscopy, 1981, Columbia, United States

Abstract

Of major technological importance is the need for high purity gallium arsenide, including the requirements to characterize and control the impurities in gallium arsenide. As a contribution to meet these goals, an extensive infrared investigation has been made on several wafers of semi-insulating GaAs:Cr at room and helium temperatures. Measurements were made around the plasma edge to search for carbon and oxygen impurities, while the near infrared results around the optical band edge of GaAs indicate the presence of a chromium acceptor at approximately 0.69 eV from the valence band. A comparison is also made with the neutron activated analysis of Martin et al.

Citation Download Citation

D. G. Mead and C. R. Anderson "Impurity Modes In Semi-Insulating Chromium Doped Gallium Arsenide", Proc. SPIE 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy, (29 October 1981); https://doi.org/10.1117/12.932113

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