29 October 1981 Impurity Modes In Semi-Insulating Chromium Doped Gallium Arsenide
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Proceedings Volume 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy; (1981) https://doi.org/10.1117/12.932113
Event: 1981 International Conference on Fourier Transform Infrared Spectroscopy, 1981, Columbia, United States
Abstract
Of major technological importance is the need for high purity gallium arsenide, including the requirements to characterize and control the impurities in gallium arsenide. As a contribution to meet these goals, an extensive infrared investigation has been made on several wafers of semi-insulating GaAs:Cr at room and helium temperatures. Measurements were made around the plasma edge to search for carbon and oxygen impurities, while the near infrared results around the optical band edge of GaAs indicate the presence of a chromium acceptor at approximately 0.69 eV from the valence band. A comparison is also made with the neutron activated analysis of Martin et al.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. G. Mead, D. G. Mead, C. R. Anderson, C. R. Anderson, "Impurity Modes In Semi-Insulating Chromium Doped Gallium Arsenide", Proc. SPIE 0289, 1981 Intl Conf on Fourier Transform Infrared Spectroscopy, (29 October 1981); doi: 10.1117/12.932113; https://doi.org/10.1117/12.932113
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