1 January 1981 Texas Instruments (TI) 800X800 Charge-Coupled Device (CCD) Image Sensor
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Abstract
The design and performance of the Texas Instruments 800 x 800 CCD imager are described. This device is fabricated utilizing a three phase, three level polysilicon gate process. The chip is thinned to ~ 8 μm and is employed in the rear illumination mode. Detailed measurements of device performance including dark current as a function of temperature, linearity, and noise are presented. The device is coated with a UV downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morley M. Blouke, James R. Janesick, Joseph E. Hall, Marvin W. Cowens, "Texas Instruments (TI) 800X800 Charge-Coupled Device (CCD) Image Sensor", Proc. SPIE 0290, Solid-State Imagers for Astronomy, (1 January 1981); doi: 10.1117/12.965830; https://doi.org/10.1117/12.965830
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