22 January 1982 Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures
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Abstract
This paper reports on photodiode structures designed and fabricated to reduce unwanted ionizing-radiation induced noise currents without significantly reducing the optical sig-nal currents. For the optical wavelength range from 0.7 µm to 1.4 μm, we have studied three types of photodiode structures fabricated from GaAlAs/GaAs, GaAlSb, and InGaAsP compound semiconductor materials. In addition, we compare the results of testing these specially designed direct bandgap photodiodes with commercially available direct and indirect hand qap photodiodes in an ionizing-radiation environment.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. J. Wiczer, L. R. Dawson, G. C. Osbourn, C. E. Barnes, "Direct Bandgap, Ionizing-Radiation Insensitive, Photodiode Structures", Proc. SPIE 0296, Fiber Optics in Adverse Environments I, (22 January 1982); doi: 10.1117/12.932434; https://doi.org/10.1117/12.932434
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