30 June 1982 Integrating 128-Element Linear Imager For The 1 To 5µm Region
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Abstract
Useful charge integration has been achieved in high quality photovoltaic InSb diodes when combined with a field effect transistor (FET) multiplexing (MUX) scheme. An experimental detector assembly with a linear array of 128 InSb diodes coupled to a FET MUX has been developed. The first stage J-FET preamp, pixel reset switch, MUX, and the InSb array are contained in a hybrid microcircuit of compact dimensions (1-3/4" by 1" by 1/8"). A low noise preamplifier topology which capitalizes on the low video line capacitance inherent with hybrid fabrication techniques is also utilized. Measurements indicate a signal-to-noise of over 1000:1 and response uniformity of +2 percent. Sample images show subtle detail which supports the estimated radiometric sensitivity of 0.01°K NEAt.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary C. Bailey, Gary C. Bailey, } "Integrating 128-Element Linear Imager For The 1 To 5µm Region", Proc. SPIE 0311, Mosaic Focal Plane Methodologies II, (30 June 1982); doi: 10.1117/12.932798; https://doi.org/10.1117/12.932798
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