Useful charge integration has been achieved in high quality photovoltaic InSb diodes when combined with a field effect transistor (FET) multiplexing (MUX) scheme. An experimental detector assembly with a linear array of 128 InSb diodes coupled to a FET MUX has been developed. The first stage J-FET preamp, pixel reset switch, MUX, and the InSb array are contained in a hybrid microcircuit of compact dimensions (1-3/4" by 1" by 1/8"). A low noise preamplifier topology which capitalizes on the low video line capacitance inherent with hybrid fabrication techniques is also utilized. Measurements indicate a signal-to-noise of over 1000:1 and response uniformity of +2 percent. Sample images show subtle detail which supports the estimated radiometric sensitivity of 0.01Ã‚Â°K NEAt.