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3 May 1982 Chemical Vapor Deposited (CVD) Silicon Carbide Mirror Technology
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Proceedings Volume 0315, Reflecting Optics for Synchrotron Radiation; (1982) https://doi.org/10.1117/12.932998
Event: 1981 Brookhaven Conferences, 1981, Upton, United States
Abstract
Chemical vapor deposited (CVD) silicon carbide (SiC) has been undergoing evaluation as a candidate mirror and mirror substrate material for several years. A summary of the test results is presented along with the material development work currently underway. The tests show that a super polished CVD-SiC surface is an outstanding mirror for some applications. For others, the preferred mirror is a composite produced by coating the polished CVD-SiC with an appropriate surface layer. An exceptional feature of the CVD SiC is its tolerance to cleaning, coating and recoating without damaging the super polish. Work to date has been on small, flat mirrors (less than 3" x 3"). For synchrotron radiation (SR) work, the need is for large mirrors (up to 10 x 40 inches) with aspheric figures. The current material development effort is concentrated on providing improved quality at the intermediate size of 41/2 x 22 inches. Future work will be devoted to establishing the technology of polishing and figuring, together with the scale-up to the 40 inch size.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard E. Engdahl "Chemical Vapor Deposited (CVD) Silicon Carbide Mirror Technology", Proc. SPIE 0315, Reflecting Optics for Synchrotron Radiation, (3 May 1982); https://doi.org/10.1117/12.932998
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