3 May 1982 Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors
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Proceedings Volume 0315, Reflecting Optics for Synchrotron Radiation; (1982) https://doi.org/10.1117/12.932999
Event: 1981 Brookhaven Conferences, 1981, Upton, United States
Abstract
CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/a ratio and its ability to be super-polished to <10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard L. Gentilman, Edward A. Maguire, "Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors", Proc. SPIE 0315, Reflecting Optics for Synchrotron Radiation, (3 May 1982); doi: 10.1117/12.932999; https://doi.org/10.1117/12.932999
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