3 May 1982 Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors
Author Affiliations +
Proceedings Volume 0315, Reflecting Optics for Synchrotron Radiation; (1982) https://doi.org/10.1117/12.932999
Event: 1981 Brookhaven Conferences, 1981, Upton, United States
CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/a ratio and its ability to be super-polished to <10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard L. Gentilman, Richard L. Gentilman, Edward A. Maguire, Edward A. Maguire, } "Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors", Proc. SPIE 0315, Reflecting Optics for Synchrotron Radiation, (3 May 1982); doi: 10.1117/12.932999; https://doi.org/10.1117/12.932999


Evaluation of segmented and brazed mirror assemblies
Proceedings of SPIE (August 18 2005)
CVC silicon carbide high-performance optical systems
Proceedings of SPIE (October 13 2004)
Large optics from silicon carbide
Proceedings of SPIE (March 25 1992)
Ceramic Materials As Mirrors For Synchrotron Radiation
Proceedings of SPIE (May 02 1982)
Surface modification of SiC mirror by IARE method
Proceedings of SPIE (February 17 2011)

Back to Top