3 May 1982 Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors
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Proceedings Volume 0315, Reflecting Optics for Synchrotron Radiation; (1982) https://doi.org/10.1117/12.932999
Event: 1981 Brookhaven Conferences, 1981, Upton, United States
Abstract
CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/a ratio and its ability to be super-polished to <10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard L. Gentilman, Richard L. Gentilman, Edward A. Maguire, Edward A. Maguire, } "Chemical Vapor Deposition Of Silicon Carbide For Large Area Mirrors", Proc. SPIE 0315, Reflecting Optics for Synchrotron Radiation, (3 May 1982); doi: 10.1117/12.932999; https://doi.org/10.1117/12.932999
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