2 August 1982 Application Of Molecular Beam Epitaxy To Microwave And Millimeter Wave Devices
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Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982) https://doi.org/10.1117/12.933128
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States
Abstract
Material requirements for various microwave and millimeter wavelength solid state devices are discussed and the applicability of molecular beam exitaxy to growth of the epitaxial layers is presented. The complex doping profiles required for these devices suggest the precise control of epitaxial film thickness, impurity concentration, uniformity, interfaces, alloy composition and surface quality achievable with MBE.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N.Walter Cox, "Application Of Molecular Beam Epitaxy To Microwave And Millimeter Wave Devices", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933128; https://doi.org/10.1117/12.933128
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