2 August 1982 Impact Of Molecular Beam Epitaxy On Millimeter Wave And Optical Systems
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Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982) https://doi.org/10.1117/12.933113
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States
Abstract
Molecular beam epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on a wide variety of substrates. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a high level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave, millimeter wave and optical system applications.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George D. O'Clock, L.Peter Erickson, "Impact Of Molecular Beam Epitaxy On Millimeter Wave And Optical Systems", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933113; https://doi.org/10.1117/12.933113
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