2 August 1982 Impact Of Molecular Beam Epitaxy On Millimeter Wave And Optical Systems
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Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982) https://doi.org/10.1117/12.933113
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States
Abstract
Molecular beam epitaxy (MBE) is an ultrahigh vacuum evaporation process for growing epitaxial films on a wide variety of substrates. The basic constituents of the films are thermally evaporated and directed toward a heated substrate. The evaporated materials are deposited on the heated substrate surface forming a film. MBE offers the ability to maintain a high level of precise control over material composition and film thickness required for semiconductor devices utilized in microwave, millimeter wave and optical system applications.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George D. O'Clock, George D. O'Clock, L.Peter Erickson, L.Peter Erickson, } "Impact Of Molecular Beam Epitaxy On Millimeter Wave And Optical Systems", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933113; https://doi.org/10.1117/12.933113
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