2 August 1982 Planar Doped Barriers By Molecular Beam Epitaxy For Millimeter Wave Devices
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Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982) https://doi.org/10.1117/12.933110
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States
Abstract
A novel electrostatic barrier concept, known as a planar doped barrier (PDB), has been demonstrated in GaAs crown by molecular beam epitaxy (MBE). The PDB structure has an n+-i-o+-i-n+ configuration in which a thin acceptor layer (50A) is placed within an undoped semiconductor region bounded by donor layers. Since the PDB is a majority carrier semicon-ductor structure with electron conduction by thermionic emission, it can be operated at extremely high frequencies. The key features of the PDB are that the zero-bias barrier height and the dearee of asymmetry in the rectifying I-V characteristics can be continually and in-dependently controlled. The zero-bias barrier height can be effectively varied from zero to sliahtly less than the bandgap of the semiconductor. In addition, the capacitance of the PDB is virtually constant over the entire operating voltage range. In contrast to Schottky barriers, the ability to design the electrical, properties of planar doped barriers can be used to optimize the performance of many electronic devices. The PDB concept has very important applications in high-frequency microwave and millimeter wave devices. PDB mixer diodes have been made which utilize low barrier heights for high sensitivity and low local oscillator power requirements. Very high speed PDB photodiodes have been demonstrated with subnanosecond response times. In addition, a revolutionary new planar doped barrier transistor (PDBT) is currently being developed for three-terminal am-plification in the millimeter wave frequency range. These devices will have sianificant im-pact in defense-related secure communications and miniaturized high-resolution radar systems.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. J. Malik, R. J. Malik, } "Planar Doped Barriers By Molecular Beam Epitaxy For Millimeter Wave Devices", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933110; https://doi.org/10.1117/12.933110
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