2 August 1982 Silicon Technology Applicable To Monolithic Millimeter Wave Sources
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Proceedings Volume 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits; (1982); doi: 10.1117/12.933108
Event: Integrated Optics and Millimeter and Microwave Integrated Circuits, 1981, Huntsville, United States
Abstract
We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, unique secondary ion mass spectroscopy (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra-thin, reproducible wafers, and have resulted in the development of silicon hybrid circuits, thus paving the way to production of silicon monolithic integrated millimeter-wave sources.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rosen, M. Caulton, P. Stabile, A. Gombar, W. Janton, C. P. Wu, C. W. Magee, "Silicon Technology Applicable To Monolithic Millimeter Wave Sources", Proc. SPIE 0317, Integrated Optics and Millimeter and Microwave Integrated Circuits, (2 August 1982); doi: 10.1117/12.933108; https://doi.org/10.1117/12.933108
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KEYWORDS
Silicon

Annealing

Microwave radiation

Integrated circuits

Semiconducting wafers

Ion implantation

Diodes

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