Low Temperature Photo Chemical Vapor Deposition (CVD) Oxide For Interlevel Insulator Applications

E. M. Yee; J. W. Peters

doi:10.1117/12.933160

4 August 1982 Low Temperature Photo Chemical Vapor Deposition (CVD) Oxide For Interlevel Insulator Applications

E. M. Yee, J. W. Peters

Proceedings Volume 0319, Very High Speed Integrated Circuit Technology for Electro-Optic Applications; (1982) https://doi.org/10.1117/12.933160
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The need for a reliable multilevel metal interconnect for high density, high performance ICs is well recognized. Successful development of a double level metal process would result in significant improvement in speed, higher device packing density, the fabrication of new structures not available using single level metallization, the reduction of cross talk between metal lines, and the fabrication of gate arrays. A double level metal (DLM) interconnect technology using aluminum or aluminum alloy for the first metal layer has yet to be widely implemented. This is mainly caused by difficulty in forming a high quality inter-level insulator. The initial success achieved with the Photo-CVD oxide process (PHOTOXTM) developed for the deposition of Si0₂ as an interlevel insulator for DLM applications is reported herein. The PHOTOX-process is a low temperature (50 to 300°C), low pressure (approximately 1 torr) technique, which is inherently free of any high energy radiation that could cause material damage. The insulator properties required for DLM processing have been exhibited routinely with the PHOTOX silicon dioxide dielectric. The inherent dielectric strength of PHOTOX Si0₂ is sufficient for it to be used as a DLM insulator. Excellent mechanical properties such as conformal coating, smooth surface morphology, low pinhole density, lack of cracking, and good adhesion to underlying surfaces are achieved. Electrical evaluation of large area capacitors, serpentine capacitors, and via chains have confirmed the quality of the oxide bulk properties. Initial life test results from temperature-cycled packaged capacitors indicate the potential for PHOTOX Si0₂ reliability.

Citation Download Citation

E. M. Yee and J. W. Peters "Low Temperature Photo Chemical Vapor Deposition (CVD) Oxide For Interlevel Insulator Applications", Proc. SPIE 0319, Very High Speed Integrated Circuit Technology for Electro-Optic Applications, (4 August 1982); https://doi.org/10.1117/12.933160

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