27 August 1982 Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters
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Proceedings Volume 0321, Integrated Optics II; (1982) https://doi.org/10.1117/12.933230
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Deep Zn diffused stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition for fiber optic transmitter applications are reported. Stripe widths of 2, 4, and 8 pm are examined in terms of laser threshold currents and far-field radiation patterns. For lasers with a 4 pm stripe, threshold currents as low as 40 mA, a characteristic temperature as large as 170°C, and external differential quantum efficiencies as high as 80-90% are obtained. Single mode operation of these lasers is observed. Preliminary results on the device uniformity and high-speed modulation characteristics are includded.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. S. Hong, C. S. Hong, J. J. Coleman, J. J. Coleman, P. D. Dapkus, P. D. Dapkus, D. E. Thompson, D. E. Thompson, M. E. Kim, M. E. Kim, } "Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters", Proc. SPIE 0321, Integrated Optics II, (27 August 1982); doi: 10.1117/12.933230; https://doi.org/10.1117/12.933230
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