27 August 1982 Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters
Author Affiliations +
Proceedings Volume 0321, Integrated Optics II; (1982) https://doi.org/10.1117/12.933230
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Deep Zn diffused stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition for fiber optic transmitter applications are reported. Stripe widths of 2, 4, and 8 pm are examined in terms of laser threshold currents and far-field radiation patterns. For lasers with a 4 pm stripe, threshold currents as low as 40 mA, a characteristic temperature as large as 170°C, and external differential quantum efficiencies as high as 80-90% are obtained. Single mode operation of these lasers is observed. Preliminary results on the device uniformity and high-speed modulation characteristics are includded.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. S. Hong, C. S. Hong, J. J. Coleman, J. J. Coleman, P. D. Dapkus, P. D. Dapkus, D. E. Thompson, D. E. Thompson, M. E. Kim, M. E. Kim, } "Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters", Proc. SPIE 0321, Integrated Optics II, (27 August 1982); doi: 10.1117/12.933230; https://doi.org/10.1117/12.933230


Mode-Controlled Galnasp-Inp Long Wavelength Lasers
Proceedings of SPIE (February 24 1981)
Heterojunction photodiode: an analytical mathematical model
Proceedings of SPIE (December 28 1999)
Highly efficient 808 nm range Al free lasers by gas...
Proceedings of SPIE (April 30 1997)
Performance of ridge-guide AlGaInAs lasers
Proceedings of SPIE (May 01 1997)
High Modulation Rate Laser Array For Microwave Optics
Proceedings of SPIE (August 13 1989)

Back to Top