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23 April 1982 Picosecond Laser Damage Mechanisms At Semiconductor Surfaces
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Proceedings Volume 0322, Picosecond Lasers and Applications; (1982) https://doi.org/10.1117/12.933214
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
We treat picosecond laser induced damage as a non-equilibrium phase transition and propose a new damage mechanism. This model which includes energy transfer by resonant surface plasmons on small electron density droplets is shown to be consistent with existing experimental data. New experimental data has been taken which demonstrates the nucleation and growth aspects of the laser damage process.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. F. Becker, R. M. Walser, Y. K. Jhee, and D. Y. Sheng "Picosecond Laser Damage Mechanisms At Semiconductor Surfaces", Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); https://doi.org/10.1117/12.933214
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