23 April 1982 Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser
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Proceedings Volume 0322, Picosecond Lasers and Applications; (1982) https://doi.org/10.1117/12.933202
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. L. Cao, A. M. Vaucher, J. D. Ling, C. H. Lee, "Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser", Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); doi: 10.1117/12.933202; https://doi.org/10.1117/12.933202

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