23 April 1982 Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser
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Proceedings Volume 0322, Picosecond Lasers and Applications; (1982) https://doi.org/10.1117/12.933202
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. L. Cao, W. L. Cao, A. M. Vaucher, A. M. Vaucher, J. D. Ling, J. D. Ling, C. H. Lee, C. H. Lee, } "Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser", Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); doi: 10.1117/12.933202; https://doi.org/10.1117/12.933202


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