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15 September 1982 Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934289
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
The morphologies observed on layers of III-V compounds and their alloys grown by Liquid Phase Epitaxy (LPE) are reviewed; these include: facets, terraces and the effect of small misorientation of the substrate; effects due to both the moving and the static three-phase boundary line on the surface of the crystal; nucleation effects; and the effects of insoluble particles in they solutions.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. B. Small and R. M. Potemski "Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934289
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