15 September 1982 Determination Of Al In Ga1-xAlxAs By Auger Spectroscopy Ion Microprobe Analysis And Photoluminescence
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934292
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Single layers of Ga1-xAlxAs were grown on semi-insulating Cr-doped GaAs substrates by liquid phase epitaxy. The samples consisted of six series. Within each series, the mole fraction of Al ranged from 0 to 0.45. Each series was either doped p with Ge or n with Te. The doping levels ranged from 1015 to 1019 carriers/cm3. The mole fraction of Al in each sample was measured independently by Auger electron spectroscopy, ion microprobe mass analysis, and photoluminescence for comparison with phase diagram predictions. The carrier concentrations were estimated by the half-width of the photoluminescence peaks. The techniques, their discrepancies, and agreements are discussed.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. S. Stewart, T. S. Stewart, S. I. Boldish, S. I. Boldish, J. A. Osmer, J. A. Osmer, N. Marquez, N. Marquez, D. G. Heflinger, D. G. Heflinger, G. A. Evans, G. A. Evans, J. B. Kirk, J. B. Kirk, A. Ceruzzi, A. Ceruzzi, A. Mantie, A. Mantie, T. Stockton, T. Stockton, } "Determination Of Al In Ga1-xAlxAs By Auger Spectroscopy Ion Microprobe Analysis And Photoluminescence", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934292; https://doi.org/10.1117/12.934292

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