Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications

S. T. Jolly; S. Y. Narayan; J. P. Paczkowski; D. Capewell

doi:10.1117/12.934279

15 September 1982 Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications

S. T. Jolly, S. Y. Narayan, J. P. Paczkowski, D. Capewell

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934279
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Vapor-phase epitaxy (VPE) systems for the growth of 1) GaAs on Cr-doped GaAs substrates, and 2) lattice matched GaInAs and GaInAsP on Fe-doped InP substrates are briefly described. Layer composition of the ternary and quaternary compounds were measured by electron probe microanalysis, lattice mismatch by X-ray diffractometry, average carrier concentration and mobility determined using the Van der Pauw technique. Carrier profiles were investigated using an electro-chemical profiler. Several hundred n-type Ga0.47In0.53As/InP structures have been grown and characterized. Unintentionally-doped layers with a carrier concentration of 2x1015cm-3 and μ(300) and μ(77) of 11x103 and 38x103cm2V-ls-1, respectively, were realized. These represent the highest mobility values reported for VPE Ga0.47In0.53As at this doping level. Se-doped n-layers ranging in thickness from 0.2 to several μm and with carrier density from 1x1016 cm to 3x1018cm-3 + were grown. n-n structures with sharp n+-n transitions were grown for device fabrication studies. The doping profile of a 2 cm x 1 cm ternary layer grown using a rotating substrate holder was found to be fairly uniform; this n+-n wafer had an n+-layer doping of 1.6±0.1x1018cm-3, n+-layer thickness of 0.31±0.01 μm, n-layer doping of 9.5±0.5x101bcm-3, and n-layer thickness of 0.3±0.03 μm. The mobility profile of submicrometer n-layers was measured using the differential Van der Pauw technique. The high mobility was found to be maintained down to the ternary-substrate interface.

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S. T. Jolly, S. Y. Narayan, J. P. Paczkowski, and D. Capewell "Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934279

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