15 September 1982 Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934279
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Vapor-phase epitaxy (VPE) systems for the growth of 1) GaAs on Cr-doped GaAs substrates, and 2) lattice matched GaInAs and GaInAsP on Fe-doped InP substrates are briefly described. Layer composition of the ternary and quaternary compounds were measured by electron probe microanalysis, lattice mismatch by X-ray diffractometry, average carrier concentration and mobility determined using the Van der Pauw technique. Carrier profiles were investigated using an electro-chemical profiler. Several hundred n-type Ga0.47In0.53As/InP structures have been grown and characterized. Unintentionally-doped layers with a carrier concentration of 2x1015cm-3 and μ(300) and μ(77) of 11x103 and 38x103cm2V-ls-1, respectively, were realized. These represent the highest mobility values reported for VPE Ga0.47In0.53As at this doping level. Se-doped n-layers ranging in thickness from 0.2 to several μm and with carrier density from 1x1016 cm to 3x1018cm-3 + were grown. n-n structures with sharp n+-n transitions were grown for device fabrication studies. The doping profile of a 2 cm x 1 cm ternary layer grown using a rotating substrate holder was found to be fairly uniform; this n+-n wafer had an n+-layer doping of 1.6±0.1x1018cm-3, n+-layer thickness of 0.31±0.01 μm, n-layer doping of 9.5±0.5x101bcm-3, and n-layer thickness of 0.3±0.03 μm. The mobility profile of submicrometer n-layers was measured using the differential Van der Pauw technique. The high mobility was found to be maintained down to the ternary-substrate interface.
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S. T. Jolly, S. T. Jolly, S. Y. Narayan, S. Y. Narayan, J. P. Paczkowski, J. P. Paczkowski, D. Capewell, D. Capewell, } "Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934279; https://doi.org/10.1117/12.934279
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