Growth And Characterization Of High Purity H[sub]2[/sub]-In-HCl-PH[sub]3[/sub] Vapor Phase Epitaxy (VPE) InP

T. J. Roth; B. J. Skromme; T. S. Low; G. E. Stillman; L. M. Zinkiewicz

doi:10.1117/12.934273

15 September 1982 Growth And Characterization Of High Purity H₂-In-HCl-PH₃ Vapor Phase Epitaxy (VPE) InP

T. J. Roth, B. J. Skromme, T. S. Low, G. E. Stillman, L. M. Zinkiewicz

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934273
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Over the past decade indium phosphide has become one of the most intensively studied semiconducting materials. A high saturation velocity and large peak to valley ratio in its velocity field characteristic make it an attractive alternative for many high performance microwave electrical devices. Interest in the InP-InGaAsP alloy system has been further stimulated by the need for emitters and detectors in the 1.3 to 1.55 μm region where the performance of low loss silica fibers is optimal. In addition, an energy gap which is nearly ideal for conversion of solar radiation to electrical power makes it an interesting compound from that point of view. The ability to grow high purity epitaxial layers is important for the evaluation of fundamental material parameters and for controlling the doping level to optimize the performance of specific devices.

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T. J. Roth, B. J. Skromme, T. S. Low, G. E. Stillman, and L. M. Zinkiewicz "Growth And Characterization Of High Purity H₂-In-HCl-PH₃ Vapor Phase Epitaxy (VPE) InP", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934273

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