15 September 1982 InP Millimeter Wave Gunn Devices By Vapor Phase Epitaxy (VPE)
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934275
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Vapor phase epitaxial growth, using a PC13-In-H2 system, has been used to produce InP Gunn devices for the millimeter wave range. Several different multilayer profile configurations have been utilized to produce state-of-the-art performance in the areas of low noise amplifiers, medium power amplifiers and high efficiency Gunn oscillators for operation throughout the 26-140 GHz range. Typical doping profiles of each device structure, as well as the growth procedures required for each profile, are discussed. Device fabrication techniques and measured rf data are also presented.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. D. Crowley, J. D. Crowley, D. R. Tringali, D. R. Tringali, I. V. Zubeck, I. V. Zubeck, F. B. Fank, F. B. Fank, "InP Millimeter Wave Gunn Devices By Vapor Phase Epitaxy (VPE)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934275; https://doi.org/10.1117/12.934275
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