Liquid Phase Epitaxy (LPE) Techniques For Compound Semiconductor Growth

L. R. Dawson

doi:10.1117/12.934288

15 September 1982 Liquid Phase Epitaxy (LPE) Techniques For Compound Semiconductor Growth

L. R. Dawson

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934288
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Liquid phase epitaxy (LPE) is a method of crystal growth well suited to the preparation of a wide range of compound semiconductor materials including GaAs, AlAs, GaP, InP, and GaSb, as well as their ternary and quaternary alloys. The advantages of LPE over other solution growth methods are substantial, primarily in material purity, doping flexibility, and dimensional control. It has particular advantages in achieving the complex multilayer structures required for many interesting optical devices, such as injection lasers, light emitting diodes, and photodetectors. LPE has appeared in many configurations in recent years, with the dominant variation at present being the sliding boat method. A good understanding of the capabilities of this method can be obtained by studying the growth of GaAs-AlxGa1-xAs heterostructures.

Citation Download Citation

L. R. Dawson "Liquid Phase Epitaxy (LPE) Techniques For Compound Semiconductor Growth", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934288

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