15 September 1982 Molecular Beam Epitaxial Growth Of Silicon Devices
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934269
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Silicon growth by Molecular Beam Epitaxy has great advantages for device fabrication. It can readily provide doping profiles with arbitrary and complex shapes, in any sequence, with abrupt transitions without smearing or compensation. Excellent depth and doping control results for layer thickness down to a few angstroms. Examples are shown of profiles that have already been grown for varactor diodes, avalanche and tunnel diodes, a low barrier Schottky diode and an n-p-n bipolar transistor.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. G. Allen, F. G. Allen, S. S. Iyer, S. S. Iyer, R. A. Metzger, R. A. Metzger, "Molecular Beam Epitaxial Growth Of Silicon Devices", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934269; https://doi.org/10.1117/12.934269


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