15 September 1982 Organometallic Vapor Phase Epitaxy (OMVPE) Growth Of AlxGa1-xAs
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934278
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
The OMVPE growth technique has only recently been established to yield device quality III-V compounds and alloys. The alloy receiving the most attention has been AlxGa1-xAs because of its application to lattice matched heterostructure devices such as solar cells and lasers, including multiquantum-well structures. This paper briefly reviews the development of OMVPE for the growth of AlxGa1-xAs, including a discussion of problems which were solved to reach the current state-of-the-art. The fundamental aspects of OMVPE growth are discussed, especially emphasizing fundamental advantages and disadvantages of OMVPE relative to other growth techniques such as LPE, MBE, and halide VPE. Other less fundamental aspects of OMVPE relating to purity, uniformity, surface morphology, and flexibility are also discussed. The current status of OMVPE AlxGa1-xAs material and devices is summarized.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerald B. Stringfellow, Gerald B. Stringfellow, } "Organometallic Vapor Phase Epitaxy (OMVPE) Growth Of AlxGa1-xAs", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934278; https://doi.org/10.1117/12.934278
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