Novel Ga/AsCl[sub]3[/sub]/H[sub]2[/sub] Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs

P. C. Colter; C. W. Litton; D. C. Reynolds; D. C. Look; P. W. Yu; S. S. Li; W. L. Wang

doi:10.1117/12.934272

15 September 1982 Novel Ga/AsCl₃/H₂ Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs

P. C. Colter, C. W. Litton, D. C. Reynolds, D. C. Look, P. W. Yu, S. S. Li, W. L. Wang

Author Affiliations +

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934272
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

An AsCl3 vapor phase epitaxial reactor has been constructed which is capable of operation with a variable controlled Ga/As ratio. Layers grown in this reactor have been characterized by photoluminescence, electrical and DLTS measurements. Results to date indicate differing influence of the Ga/As gas phase ratio on <100> and <211A> orientation layers, particularly on deep level incorporation.

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P. C. Colter, C. W. Litton, D. C. Reynolds, D. C. Look, P. W. Yu, S. S. Li, and W. L. Wang "Novel Ga/AsCl₃/H₂ Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934272

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