Properties Of Ion Assisted Deposited Silica And Titania Films

Thomas H. Allen

doi:10.1117/12.933291

29 April 1982 Properties Of Ion Assisted Deposited Silica And Titania Films

Thomas H. Allen

Proceedings Volume 0325, Optical Thin Films; (1982) https://doi.org/10.1117/12.933291
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The reactive deposition of both silica and titania films was investigated using an oxygen ion source similar to that developed by Ebert. The ion source used a DC gas discharge to generate oxygen ions and a graphite exit orifice to direct the ion beam to the substrate. It was found that this source could produce ion currents of 1.26 mA at a discharge voltage of 400 volts. The source materials were SiO and TiO evaporated from resistively heated boats. The measured optical constants of the titania films showed that increasing ion currents decreased the absorption constant and increased the refractive index. Infrared attenuated total reflectance (ATR) measurements were used to study the stoichiometry, moisture content, and dangling bonds of the silica films. These measurements showed that the stoichiometry of the silica films approached that of SiO2 as the ion current was increased. Laser calorimetry was used to measure the infrared absorptance at 1.06 μm to determine if the titania films were oxygen deficient. X-ray diffraction measurements on the titania films indicated that they were essentially amorphous.

Citation Download Citation

Thomas H. Allen "Properties Of Ion Assisted Deposited Silica And Titania Films", Proc. SPIE 0325, Optical Thin Films, (29 April 1982); https://doi.org/10.1117/12.933291

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