30 June 1982 Resist Possibilities And Limitations In Ion Beam Lithography
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A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 KeV H2+, 100 KeV and and 150 KeV Li+ ions are presented and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Macrander, A. Macrander, D. Barr, D. Barr, A. Wagner, A. Wagner, } "Resist Possibilities And Limitations In Ion Beam Lithography", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933426; https://doi.org/10.1117/12.933426


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