30 June 1982 X-Ray Lithography: Technology For The 1980s
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Abstract
Advances in X-ray lithography technology are occurring at a promising rate. Impressive progress has been made in the development of high-intensity sources, mask membrane and patterning technology, precision mask-to-wafer alignment, and faster, high-resolution X-ray resists. The concept of using this inherently low defect lithographic technique for manufacturing submicron integrated circuits by 1985 and beyond, is realistic. Current X-ray Lithographic research systems replicate integrated circuit patterns on a full wafer with a single exposure, but step-and-repeat exposure systems are being developed for more advanced submicron applications. Both system types are discussed, and performance trade analyses are presented to show the relative merits of each approach.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. R. Fencil, G. P. Hughes, "X-Ray Lithography: Technology For The 1980s", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); doi: 10.1117/12.933419; https://doi.org/10.1117/12.933419
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